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US Patent Issued to NantG Power, Nant Holdings IP on Aug. 25 for "Self-similar high efficiency solar cells and concentrators" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,908, issued on Aug. 25, was assigned to NantG Power LLC (El Segundo, Calif.) and Nant Holdings IP LLC (Culver City, Calif.). "Self-similar ... Read More


US Patent Issued to Rambus on Aug. 25 for "Synchronous wired-or ack status for memory with variable write latency" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,909, issued on Aug. 25, was assigned to Rambus Inc. (San Jose, Calif.). "Synchronous wired-or ack status for memory with variable write lat... Read More


US Patent Issued to Azur Space Solar Power on Aug. 25 for "Protection of space solar cells in an arrangement in the form of a string" (German Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,910, issued on Aug. 25, was assigned to Azur Space Solar Power GmbH (Heilbronn, Germany). "Protection of space solar cells in an arrangemen... Read More


US Patent Issued to Northrop Grumman Systems on Aug. 25 for "Reconfigurable solar array for stable output voltage over a range of temperatures with high operational efficiency" (Maryland Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,911, issued on Aug. 25, was assigned to Northrop Grumman Systems Corp. (Falls Church, Va.). "Reconfigurable solar array for stable output v... Read More


US Patent Issued to Applied Materials on Aug. 25 for "Stress relaxation trenches for gallium nitride microLED layers on silicon substrates" (New York, California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,912, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Stress relaxation trenches for gallium nitride micro... Read More


US Patent Issued to HAMAMATSU PHOTONICS on Aug. 25 for "Light emitting diode element" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,913, issued on Aug. 25, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan). "Light emitting diode element" was invented by Asuka M... Read More


US Patent Issued to ENKRIS SEMICONDUCTOR on Aug. 25 for "Multi-quantum well semiconductor structure including a scandium nitride insertion layer" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,914, issued on Aug. 25, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Multi-quantum well semiconductor structure including a ... Read More


US Patent Issued to Semiconductor Energy Laboratory on Aug. 25 for "Display apparatus and electronic device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,915, issued on Aug. 25, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Display apparatus and electronic device"... Read More


US Patent Issued to Kookmin University Industry Academic Cooperation Foundation on Aug. 25 for "Ultra-thin fin LED device and ultra-thin fin LED electrode assembly" (South Korean Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,916, issued on Aug. 25, was assigned to Kookmin University Industry Academic Cooperation Foundation (Seoul, South Korea). "Ultra-thin fin L... Read More


US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE on Aug. 25 for "Light-emitting diode with emissive regions including rare earth ions" (French Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,917, issued on Aug. 25, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris) and CENTRE NATIONAL DE LA REC... Read More